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BLF147
VHF power MOS transistor
Rev. 06 -- 5 December 2006 Product data sheet
IMPORTANT NOTICE
Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact details. In data sheets where the previous Philips references remain, please use the new links as shown below. http://www.philips.semiconductors.com use http://www.nxp.com http://www.semiconductors.philips.com use http://www.nxp.com (Internet) sales.addresses@www.semiconductors.philips.com use salesaddresses@nxp.com (email) The copyright notice at the bottom of each page (or elsewhere in the document, depending on the version) - (c) Koninklijke Philips Electronics N.V. (year). All rights reserved is replaced with: - (c) NXP B.V. (year). All rights reserved. If you have any questions related to the data sheet, please contact our nearest sales office via e-mail or phone (details via salesaddresses@nxp.com). Thank you for your cooperation and understanding, NXP Semiconductors
NXP Semiconductors
Product specification
VHF power MOS transistor
FEATURES * High power gain * Low intermodulation distortion * Easy power control * Good thermal stability * Withstands full load mismatch. APPLICATIONS * Industrial and military applications in the HF/VHF frequency range.
handbook, halfpage
BLF147
PINNING - SOT121B PIN 1 2 3 4 drain source gate source DESCRIPTION
DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor encapsulated in a 4-lead, SOT121B flange package with a ceramic cap. All leads are isolated from the flange. A marking code, showing gate-source voltage (VGS) information is provided for matched pair applications. Refer to the "General" section of the handbook for further information.
1
4
d g s
2
3
CAUTION This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B. QUICK REFERENCE DATA RF performance at Th = 25 C in a common source test circuit. MODE OF OPERATION SSB, class-AB CW, class-B f (MHz) 28 108 VDS (V) 28 28 PL (W) 150 (PEP) 150 Gp (dB) >17 typ. 14 D (%) >35 typ. 70 d3 (dB) <-30 -
MAM267
Fig.1 Simplified outline and symbol.
d5 (dB) <-30 -
WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
Rev. 06 - 5 December 2006
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NXP Semiconductors
Product specification
VHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 60134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage drain current (DC) total power dissipation storage temperature junction temperature Tmb 25 C CONDITIONS - - - - -65 - MIN.
BLF147
MAX. 65 20 25 220 150 200 V V A W
UNIT
C C
THERMAL CHARACTERISTICS SYMBOL Rth j-mb Rth mb-h PARAMETER thermal resistance from junction to mounting base thermal resistance from mounting base to heatsink VALUE 0.8 0.2 UNIT K/W K/W
102 handbook, halfpage ID (A)
MRA904
handbook, halfpage
300
MGP049
Ptot (W)
(1)
200
(1) (2) (2)
10
100
1 1
10
VDS (V)
102
0 0 50 100 Th (C) 150
(1) Current is this area may be limited by RDSon. (2) Tmb = 25 C.
(1) Short-time operation during mismatch. (2) Continuous operation.
Fig.2 DC SOAR.
Fig.3 Power derating curves.
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NXP Semiconductors
Product specification
VHF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGSth VGS gfs RDSon IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage gate-source voltage difference of matched pairs forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS ID = 100 mA; VGS = 0 VGS = 0; VDS = 28 V VGS = 20 V; VDS = 0 ID = 200 mA; VDS = 10 V ID = 100 mA; VDS = 10 V ID = 8 A; VDS = 10 V ID = 8 A; VGS = 10 V VGS = 10 V; VDS = 10 V VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz VGS = 0; VDS = 28 V; f = 1 MHz MIN. 65 - - 2 - 5 - - - - -
BLF147
TYP. MAX. - - - - - 7.5 0.1 37 450 360 55 - 5 1 4.5 100 - 0.15 - - - -
UNIT V mA A V mV S A pF pF pF
VGS group indicator LIMITS (V) MIN. A B C D E F G H J K L M N 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 MAX. 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 3.1 3.2 3.3 O P Q R S T U V W X Y Z LIMITS (V) MIN. 3.3 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 MAX. 3.4 3.5 3.6 3.7 3.8 3.9 4.0 4.1 4.2 4.3 4.4 4.5
GROUP
GROUP
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NXP Semiconductors
Product specification
VHF power MOS transistor
BLF147
MGP050
handbook, halfpage
0
handbook, halfpage
60
MGP051
T.C. (mV/K) -1
ID (A) 40
-2
-3 20 -4
-5 10-2
0 10-1 1 ID (A) 10 0 5 10 15 VGS (V) 20
VDS = 28 V; valid for Th = 25 to 70 C. VDS = 10 V.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current; typical values.
Fig.5
Drain current as a function of gate-source voltage; typical values.
handbook, halfpage
170
MGP052
handbook, halfpage
1400
MRA903
RDSon (m) 150
C (pF) 1200
130
800
Cis 110 400 Cos
90 0 50 100 Tj ( C) 150
0 0 10 20 30 VDS (V) VGS = 0; f = 1 MHz. 40
ID = 8 A; VGS = 10 V.
Fig.6
Drain-source on-state resistance as a function of junction temperature; typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage; typical values.
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NXP Semiconductors
Product specification
VHF power MOS transistor
BLF147
handbook, halfpage
500
MRA902
Crs (pF)
400
300
200
100
0
0
10
20
30 VDS (V)
40
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage; typical values.
APPLICATION INFORMATION FOR CLASS-AB OPERATION RF performance in SSB operation in a common source class-AB circuit. Th = 25 C; Rth mb-h = 0.2 K/W; RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz; unless otherwise specified. PL (W) 20 to 150 (PEP) Notes 1. Optimum load impedance: 2.1 + j0 . 2. Maximum values at drive levels within the specified PEP values for either amplified tone. For the peak envelope power the values should be decreased by 6 dB. Ruggedness in class-AB operation The BLF147 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: VDS = 28 V; f = 28 MHz at rated load power. f (MHz) 28 VDS (V) 28 IDQ (A) 1 Gp (dB) >17 typ. 19 D (%) >35 typ. 40 d3 (dB) (note 2) <-30 typ. -34 d5 (dB) (note 2) <-30 typ. -40
Rev. 06 - 5 December 2006
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NXP Semiconductors
Product specification
VHF power MOS transistor
BLF147
MGP053
handbook, halfpage
30
handbook, halfpage
60
MGP054
Gp (dB)
D (%) 40
20
20
10 0 100 PL (W) PEP 200
0 0 100 PL (W) PEP 200
Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.9
Power gain as a function of load power; typical values.
Fig.10 Efficiency as a function of load power; typical values.
handbook, halfpage
-20
MGP055
handbook, halfpage
-20
MGP056
d3 (dB) -30
d5 (dB) -30
-40
-40
-50
-50
-60 0 100 PL (W) PEP 200
-60 0 100 PL (W) PEP 200
Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 9.8 ; f1 = 28.000 MHz; f2 = 28.001 MHz.
Fig.11 Third order intermodulation distortion as a function of load power; typical values.
Fig.12 Fifth order intermodulation distortion as a function of load power; typical values.
Rev. 06 - 5 December 2006
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NXP Semiconductors
Product specification
VHF power MOS transistor
BLF147
handbook, full pagewidth
C8 C1 input 50 C3 C2 L1 L2 C9 R1 R2 C4 C5 R3 R4 L5 +VG L6 C7 R5 C6 L4 D.U.T. L3 L7
C10
C12 C14 C15
output 50
C11
C13
+VD f = 28 MHz.
MGP057
Fig.13 Test circuit for class-AB operation.
Rev. 06 - 5 December 2006
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NXP Semiconductors
Product specification
VHF power MOS transistor
List of components (see Fig 13). COMPONENT C1, C3, C13, C14 C2, C8, C9 C4, C5 C6 C7 C10 C11, C12 C15 L1 DESCRIPTION film dielectric trimmer multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor VALUE 7 to 100 pF 75 pF 100 nF DIMENSIONS
BLF147
CATALOGUE NO. 2222 809 07015
2222 852 47104 2222 852 47104
multilayer ceramic chip capacitors in 3 x 100 nF parallel electrolytic capacitor multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 multilayer ceramic chip capacitor; note 1 6 turns enamelled 0.7 mm copper wire stripline; note 2 4 turns enamelled 1.5 mm copper wire grade 3B Ferroxcube wideband HF choke 3 turns enamelled 2.2 mm copper wire 1 W metal film resistor 0.4 W metal film resistor 0.4 W metal film resistor 1 W metal film resistor 79 nH length 8 mm; int. dia. 8 mm; leads 2 x 5 mm 2.2 F, 63 V 100 pF 150 pF 240 pF 145 nH length 5 mm; int. dia. 6 mm; leads 2 x 5 mm length 13 x 6 mm length 8 mm; int. dia. 10 mm; leads 2 x 5 mm
L2, L3 L4
41.1 148 nH
L5, L6 L7
4312 020 36642
R1, R2 R3 R4 R5 Notes
19.6 10 k 1 M 10
2322 153 51969 2322 151 71003 2322 151 71005 2322 153 51009
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 2.2), thickness 1.6 mm.
Rev. 06 - 5 December 2006
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NXP Semiconductors
Product specification
VHF power MOS transistor
BLF147
handbook, halfpage
30
MGP058
handbook, halfpage
10
MGP059
GP (dB) 20
Zi () 5 ri
10
0 xi
0 0 10 20 f (MHz) 30
-5 0 10 20 f (MHz) 30
Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 6.25 ; PL = 150 W (PEP); RL = 2.1 .
Class-AB operation; VDS = 28 V; IDQ = 1 A; RGS = 6.25 ; PL = 150 W (PEP); RL = 2.1 .
Fig.14 Power gain as a function of frequency; typical values.
Fig.15 Input impedance as a function of frequency (series components); typical values.
handbook, halfpage
4
MGP061
handbook, halfpage
3
MGP062
Zi () 2 ri
ZL () 2 RL
0
xi
1
-2
0
XL
-4
0
50
100
150
f (MHz)
200
-1
0
50
100
150
f (MHz)
200
Class-B operation; VDS = 28 V; IDQ = 0.2 A; RGS = 15 ; PL = 150 W.
Class-B operation; VDS = 28 V; IDQ = 0.2 A; RGS = 15 ; PL = 150 W.
Fig.16 Input impedance as a function of frequency (series components); typical values.
Fig.17 Load impedance as a function of frequency (series components); typical values.
Rev. 06 - 5 December 2006
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NXP Semiconductors
Product specification
VHF power MOS transistor
BLF147
handbook, halfpage
30
MGP060
Gp (dB) 20
10
0 0 50 100 150 f (MHz) 200
Class-B operation; VDS = 28 V; IDQ = 0.2 A; RGS = 15 ; PL = 150 W.
Fig.18 Power gain as a function of frequency; typical values.
Rev. 06 - 5 December 2006
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NXP Semiconductors
Product specification
VHF power MOS transistor
BLF147 scattering parameters VDS = 28 V; ID = 1000 mA; note 1 f (MHz) |s11| 5 10 20 30 40 50 60 70 80 90 100 125 150 175 200 250 300 350 400 450 500 600 700 800 900 1000 Note 0.91 0.91 0.92 0.92 0.92 0.92 0.92 0.93 0.93 0.93 0.94 0.95 0.95 0.96 0.96 0.97 0.98 0.98 0.98 0.98 0.98 0.98 0.98 0.98 0.97 0.97 s11 -170.00 -174.60 -177.40 -178.40 -178.80 -178.80 -179.00 -179.20 -179.60 -179.70 -179.70 179.50 179.00 178.10 177.50 175.80 174.20 172.70 171.10 169.50 167.90 164.80 161.60 158.20 154.60 151.10 |s21| 23.90 12.25 5.94 3.87 2.84 2.26 1.88 1.58 1.36 1.19 1.05 0.77 0.60 0.49 0.40 0.28 0.22 0.17 0.14 0.12 0.11 0.10 0.10 0.11 0.13 0.14 s21 93.40 89.40 81.00 79.10 75.70 73.30 69.80 66.20 63.20 60.40 57.00 49.30 45.80 41.50 36.80 33.20 30.10 31.00 32.40 36.10 39.90 50.20 57.90 63.70 67.20 70.20 |s12| 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.01 0.02 0.02 0.03 0.03 0.04 0.05 0.05 0.06 0.07 0.09 0.10 0.12 0.14 s12 5.80 3.60 5.40 8.90 12.00 16.90 20.30 24.00 28.80 34.20 39.30 52.30 64.90 72.40 75.80 82.30 83.00 85.00 84.90 85.90 84.30 83.20 81.70 81.00 79.50 78.80 |s22| 0.88 0.89 0.83 0.86 0.85 0.87 0.90 0.90 0.90 0.90 0.90 0.88 0.91 0.95 0.94 0.95 0.96 0.97 0.97 0.97 0.98 0.97 0.97 0.97 0.97 0.96
BLF147
s22 -171.20 -177.20 -179.60 -178.90 -178.60 -176.90 -177.30 -178.10 -178.40 -178.60 -179.40 179.20 -179.50 179.80 177.70 176.20 173.60 171.90 169.50 167.70 165.50 161.50 157.50 153.50 149.30 144.90
1. For more extensive S-parameters see internet: http://www.semiconductors.philips.com/markets/communications/wirelesscommunications/broadcast.
Rev. 06 - 5 December 2006
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NXP Semiconductors
Product specification
VHF power MOS transistor
PACKAGE OUTLINE Flanged ceramic package; 2 mounting holes; 4 leads
D
BLF147
SOT121B
A F D1 q U1 C B
H b
c
4
3
w2 M C M A
p
U2
U3
w1 M A M B M
1
H
2
Q
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 7.27 6.17 0.286 0.243 b 5.82 5.56 c 0.16 0.10 D D1 F 2.67 2.41 H 28.45 25.52 p 3.30 3.05 0.130 0.120 Q 4.45 3.91 q 18.42 U1 24.90 24.63 0.98 0.97 U2 6.48 6.22 0.255 0.245 U3 12.32 12.06 0.485 0.475 w1 0.25 0.01 w2 0.51 45 0.175 0.725 0.154 0.02
12.86 12.83 12.59 12.57
0.229 0.006 0.219 0.004
0.506 0.505 0.105 1.120 0.496 0.495 0.095 1.005
OUTLINE VERSION SOT121B
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-03-29
Rev. 06 - 5 December 2006
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NXP Semiconductors
BLF147
VHF power MOS transistor
Legal information
Data sheet status
Document status[1][2] Objective [short] data sheet Preliminary [short] data sheet Product [short] data sheet
[1] [2] [3]
Product status[3] Development Qualification Production
Definition This document contains data from the objective specification for product development. This document contains data from the preliminary specification. This document contains the product specification.
Please consult the most recently issued document before initiating or completing a design. The term `short data sheet' is explained in section "Definitions". The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
Definitions
Draft -- The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet -- A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer's own risk. Applications -- Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values -- Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale -- NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license -- Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
Disclaimers
General -- Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes -- NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use -- NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or
Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners.
Contact information
For additional information, please visit: http://www.nxp.com For sales office addresses, send an email to: salesaddresses@nxp.com
Rev. 06 - 5 December 2006
14 of 15
NXP Semiconductors
BLF147
VHF power MOS transistor
Revision history
Revision history Document ID BLF147_6 Modifications: BLF147_5 BLF147_4 (9397 750 11593) BLF147_3 (9397 750 08411) BLF147_CNV_2 (9397 750 xxxxx) Release date 20061205 Data sheet status Product data sheet Product data sheet Product specification Product specification Product specification Change notice Supersedes BLF147_5 BLF147_4 BLF147_3 BLF147_CNV_2 -
*
Correction made to page 9 "List of components"
20061108 20030901 20010523 19971215
Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'.
(c) NXP B.V. 2006.
All rights reserved.
For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 5 December 2006 Document identifier: BLF147_6
Rev. 06 - 5 December 2006
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